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| Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 120N20 VDSS = 200 ISOPLUS247TM ID25 = 105 (Electrically Isolated Back Surface) Single MOSFET Die RDS(on) = V A 17 mW trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead (current limit) TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 200 200 20 30 105 76 480 120 60 3 5 400 -55 ... +150 150 -55 ... +150 V V V V ISOPLUS 247TM E153432 G A A A A mJ J V/ns D Isolated back surface* D = Drain G = Gate S = Source * Patent pending Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low drain to tab capacitance(<25pF) * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Fast intrinsic Rectifier Applications 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 17 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 60A Note 2 * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control Advantages * * * * Easy assembly Space savings High power density Low noise to ground IXYS reserves the right to change limits, test conditions, and dimensions. 98586A (11/99) (c) 2000 IXYS All rights reserved 1-2 IXFR 120N20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 40 70 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 2200 1000 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 60A RG = 1 W (External), 65 110 35 360 VGS = 10 V, VDS = 0.5 * VDSS, ID = 60A 50 170 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection ISOPLUS 247 (IXFR) OUTLINE gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 60A Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 120 480 1.5 250 A A V ns mC A IF = 50A,-di/dt = 100 A/ms, VR = 100 V 1.1 13 Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 % (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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